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Top 5 books to refer for a VHDL beginner
VHDL (VHSIC-HDL, Very High-Speed Integrated Circuit Hardware Description Language) is a hardware description language used in electronic des...
Friday, 11 September 2015
UVM Interview Questions - 4
Thursday, 10 September 2015
UVM Interview Questions - 3
Wednesday, 9 September 2015
UVM Interview Questions - 1
- create
- start_item
- randomize
- finish_item
- get_response (optional)
UVM Interview Questions - 2
Ans: UVM is a methodology based on SystemVerilog language and is not a language on its own. It is a standardized methodology that defines several best practices in verification to enable efficiency in terms of reuse and is also currently part of IEEE 1800.2 working group.
Q17: What are the benefits of using UVM?
Ans: Some of the benefits of using UVM are :
- Modularity and Reusability – The methodology is designed as modular components (Driver, Sequencer, Agents , env etc) which enables reusing components across unit level to multi-unit or chip level verification as well as across projects.
- Separating Tests from Testbenches – Tests in terms of stimulus/sequencers are kept separate from the actual testbench hierarchy and hence there can be reuse of stimulus across different units or across projects
- Simulator independent – The base class library and the methodology is supported by all simulators and hence there is no dependence on any specific simulator
- Better control on Stimulus generation – Sequence methodology gives good control on stimulus generation. There are several ways in which sequences can be developed which includes randomization, layered sequences, virtual sequences etc which provides a good control and rich stimulus generation capability.
- Easy configuration – Config mechanisms simplify configuration of objects with deep hierarchy. The configuration mechanism helps in easily configuring different testbench components based on which verification environment uses it and without worrying about how deep any component is in testbench hierarchy
- Factory mechanism – Factory mechanisms simplifies modification of components easily. Creating each components using factory enables them to be overridden in different tests or environments without changing underlying code base.
- Name of the phase task or function
- Top down or bottom up phase
- Task or function
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UVM Interview Questions
- First methodology & second collection of class libraries for Automation
- Reusability through testbench
- Plug & Play of verification IPs
- Generic Testbench Development
- Vendor & Simulator Independent
- Smart Testbench i.e. generate legal stimulus as from pre-planned coverage plan
- Support CDV –Coverage Driven Verification
- Support CRV –Constraint Random Verification
- UVM standardized under the Accellera System Initiative
- Register modeling
- Quasi Static Entity (after build phase it is available throughout the simulation)
- Always tied to a given hardware(DUT Interface) Or a TLM port
- Having phasing mechanism for control the behavior of simulation
- Configuration Component Topology
- Dynamic Entity (create when needed, transfer from one component to other & then dereference)
- Not tied to a given hardware or any TLM port
- Not phasing mechanism
- List of UVM Phases:
- buid_phase
- connect_phase
- end_of_elaboration_phase
- start_of_simulation_phase
- run _phase (task)Sub Phases of Reset Phase:pre_reset_phasereset_phasepost_reset_phasepre_configure_phaseconfigure_phasepost_configure_phasepre_main_phasemain_phasepost_main_phasepre_shutdown_phaseshutdown_phasepost_shutdown_phase
- extract_phase
- check_phase
- report_phase
Wednesday, 2 September 2015
Intel's Skylarke Processors for PCs, Tablets and Servers
Friday, 21 August 2015
Resistive Memory - ReRam
The memory tech that will eventually replace NAND flash, finally in market
What is ReRam?
ReRam is Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. The biggest advantage of ReRAM technology is its good compatibility with CMOS technologies.
It is under development by a number of companies, and some have already patented their own versions of the technology. The memory operates by changing the resistance of special dielectric material called a memresistor (memory resistor) whose resistance varies depending on the applied voltage.
What makes ReRam?
From the viewpoint of the material choice, the advantage of ReRAM is evident. It is possible to fabricate MOM structures easily by using the oxides widely used in the current semiconductor technologies. Low-current ReRAM operation was reported in the CuOx-based MOM structure. The CuOx layer was grown by the thermal oxidation of the 0.18-μm Cu. NiO and CoO are being intensively studied as oxide materials for ReRAM, and these transition metal elements are also used in metal silicides employed as gate materials. Recently, the good scaling feasibility of ReRAM was demonstrated in an HfOx-based memory with a cell size of 30 nm. The devices in a 1-kbit array exhibited a high device yield (~100%) and robust cycling endurance (>106) with a pulse width of 40 ns. The memory cell consisted of a TiN/Ti/HfOx/TiN structure. Here, the Ti overlayer played the role of oxygen gettering for better ReRAM operation. The gettering effect has already been investigated in HfOx as a high-k material for the gate dielectric films in CMOS devices. The academic and technological knowledge about high-k materials will be very useful in the design of the stacking structure for a ReRAM device.
How ReRam Works?
RRAM is the result of a new kind of dielectric material which is not permanently damaged and fails when dielectric breakdown occurs; for a memresistor, the dielectric breakdown is temporary and reversible. When voltage is deliberately applied to a memresistor, microscopic conductive paths called filaments are created in the material. The filaments are caused by phenomena like metal migration or even physical defects. Filaments can be broken and reversed by applying different external voltages. It is this creation and destruction of filaments in large quantities that allows for storage of digital data. Materials that have memresistor characteristics include oxides of titanium and nickel, some electrolytes, semiconductor materials, and even a few organic compounds have been tested to have these characteristics.
The principal advantage of RRAM over other non-volatile technology is high switching speed. Because of the thinness of the memresistors, it has a great potential for high storage density, greater read and write speeds, lower power usage, and cheaper cost than flash memory. Flash memory cannot continue to scale because of the limits of the materials, so RRAM will soon replace flash memory.
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This is 8-bit microprocessor with 5 instructions. It is based on 8080 architecture. This architecture called SAP for Simple-As-Possible comp...
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Q1: What is UVM? What is the advantage of UVM? Ans: UVM (Universal Verification Methodology) is a standardized methodology for verify...
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There are some differences between UDIMMs and RDIMMs that are important in choosing the best options for memory performance. First, let’s ta...
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Up/down counter circuits are very useful devices. A common application is in machine motion control, where devices called rotary shaft encod...
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A small RISC CPU (written in VHDL) that is compatible with the 12 bit opcode PIC family. Single cycle operation normally, two cycles when th...